| |
|
| Item number: 2794E-1952512 Manufacturer no.: NVMYS3D3N06CLTWG EAN/GTIN: n/a |
| |
|
| | |
| Channel Type = N Maximum Continuous Drain Current = 133 A Maximum Drain Source Voltage = 60 V Package Type = LFPAK, SOT-669 Mounting Type = Surface Mount Pin Count = 4 Maximum Drain Source Resistance = 4.2 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 100 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Length = 5mm Automotive Standard = AEC-Q101mm More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 133 A | Maximum Drain Source Voltage: | 60 V | Package Type: | LFPAK, SOT-669 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 4.2 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 100 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5mm | Maximum Operating Temperature: | +175 °C |
|
| | |
| | | |
| Other search terms: Transistors, 1952512, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVMYS3D3N06CLTWG |
| | |
| |