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| Item number: 2794E-1952560 Manufacturer no.: NVMFD6H852NLT1G EAN/GTIN: n/a |
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![](/p.gif) | Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection PPAP Capable These Devices are Pb−Free More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 25 A | Maximum Drain Source Voltage: | 80 V | Package Type: | DFN | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 31.5 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 3.2 W | Transistor Configuration: | Dual | Maximum Gate Source Voltage: | ±20 V | Length: | 6.1mm | Maximum Operating Temperature: | +175 °C |
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![](/p.gif) | Other search terms: power mosfet, 1952560, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVMFD6H852NLT1G |
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