onsemi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247 / 1952573

Using novel field stop IGBT and SiC SBD technology, ON semiconductors new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.Copacked with SiC schottky barrier diode Ultra low reverse recovery loss Maximum Junction Temperature, Tj=175°C Higher reliability Very low switching and conduction losses Positive temperature co-efficient Tight parameter distribution Applications Automotive Industrial Inverter DC-DC Converter PFC, Totem Pole Bridgeless Hard Switching