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| Item number:
2794E-1952667 Manufacturer no.:
NVB190N65S3F EAN/GTIN:
n/a |
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| Channel Type = N
Maximum Continuous Drain Current = 20 A
Maximum Drain Source Voltage = 650 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 190 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5V
Minimum Gate Threshold Voltage = 3V
Maximum Power Dissipation = 162 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±30 V
Maximum Operating Temperature = +150 °Cmm
Forward Diode Voltage = 1.3V More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 20 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 190 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 162 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1952667, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVB190N65S3F |
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