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onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958769


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Product information
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Product Image
Item number:
     2794E-1958769
Manufacturer:
     onsemi
Manufacturer no.:
     NXH100B120H3Q0PTG
EAN/GTIN:
     n/a
Search terms:
Power transistor
Transistor
Transistors
power transistor
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 186 W
Configuration = Dual
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 22
Transistor Configuration = Dual
Dimensions = 66.2 x 32.8 x 11.9mm
Maximum Operating Temperature = +150 °C
More information:
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
186 W
Configuration:
Dual
Package Type:
Q0BOOST
Mounting Type:
Surface Mount
Channel Type:
N
Pin Count:
22
Transistor Configuration:
Dual
Dimensions:
66.2 x 32.8 x 11.9mm
Maximum Operating Temperature:
+150 °C
Minimum Operating Temperature:
-40 °C
Width:
32.8mm
Other search terms: 1958769, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH100B120H3Q0PTG
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