| ![](/p.gif) |
![](/p.gif) |
| Item number: 2794E-2006843 Manufacturer no.: SIJ150DP-T1-GE3 EAN/GTIN: n/a |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.TrenchFET Gen IV power MOSFET Very low Qg and Qoss reduce power loss and improve efficiency Flexible leads provide resilience to mechanical stress 100 % Rg and UIS tested Qgd/Qgs ratio < 1 optimizes switching characteristics More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 11 A | Maximum Drain Source Voltage: | 45 V | Package Type: | PowerPAK SO-8L | Series: | TrenchFET® Gen IV | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 0.0041 Ω, 0.00283 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.3V | Number of Elements per Chip: | 1 |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Other search terms: 2006843, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIJ150DPT1GE3 |
| ![](/p.gif) | ![](/p.gif) |
| |