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| Item number: 2794E-2006855 Manufacturer no.: SiSS22LDN-T1-GE3 EAN/GTIN: n/a |
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![](/p.gif) | The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.TrenchFET Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 92.5 A | Maximum Drain Source Voltage: | 60 V | Package Type: | PowerPAK 1212-8S | Series: | TrenchFET® Gen IV | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0051 Ω, 0.00365 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Number of Elements per Chip: | 1 |
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![](/p.gif) | Other search terms: 2006855, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS22LDNT1GE3 |
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