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N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SiSS22LDN-T1-GE3 / 2006855


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Product information
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Product Image
Item number:
     2794E-2006855
Manufacturer:
     Vishay
Manufacturer no.:
     SiSS22LDN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.TrenchFET Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested
More information:
Channel Type:
N
Maximum Continuous Drain Current:
92.5 A
Maximum Drain Source Voltage:
60 V
Package Type:
PowerPAK 1212-8S
Series:
TrenchFET® Gen IV
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.0051 Ω, 0.00365 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Number of Elements per Chip:
1
Other search terms: 2006855, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS22LDNT1GE3
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