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| Item number: 2794E-2014418 Manufacturer no.: STGWA30HP65FB2 EAN/GTIN: n/a |
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![](/p.gif) | The STMicroelectronics trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package, has a positive VCE(sat) temperature coefficient.Minimized tail current Tight parameter distribution Low thermal resistance More information: ![](/p.gif) | ![](/p.gif) | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±30V | Maximum Power Dissipation: | 167 W | Number of Transistors: | 1 | Package Type: | TO-247 long leads | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Series |
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![](/p.gif) | Other search terms: power transistor, 2014418, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA30HP65FB2 |
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