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STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247 / 2025515


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Product information
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Product Image
Item number:
     2794E-2025515
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGWA30HP65FB
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.Low thermal resistance Very fast soft recovery antiparallel diode
More information:
Maximum Continuous Collector Current:
30 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
260 W
Number of Transistors:
1
Package Type:
TO-247
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Common Emitter
Other search terms: Transistor, Transistors, 2025515, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA30HP65FB
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