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STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247 / 2025517


Quantity:  pieces  
Product information
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Product Image
Item number:
     2794E-2025517
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGWA40H65DFB2
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The STMicroelectronics high-speed HB2 series IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient
More information:
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
230 W
Number of Transistors:
1
Package Type:
TO-247
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Common Emitter
Other search terms: 2025517, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA40H65DFB2
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from £ 2.388*
  
Price is valid from 6,000 pieces
Orders only in multiples of 2 pieces
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from 2 pieces
£ 3.448*
£ 4.138
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£ 3.418*
£ 4.102
per piece
from 10 pieces
£ 2.888*
£ 3.466
per piece
from 20 pieces
£ 2.788*
£ 3.346
per piece
from 40 pieces
£ 2.618*
£ 3.142
per piece
from 6000 pieces
£ 2.388*
£ 2.866
per piece
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