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STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247 / 2025517


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Product information
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Product Image
Item number:
     2794E-2025517
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGWA40H65DFB2
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The STMicroelectronics high-speed HB2 series IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient
More information:
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
230 W
Number of Transistors:
1
Package Type:
TO-247
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Common Emitter
Other search terms: power transistor, 2025517, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA40H65DFB2
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from £ 2.118*
  
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