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onsemi NXH35C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole / 2025680


Quantity:  piece  
Product information
Product Image
Product Image
Item number:
     2794E-2025680
Manufacturer:
     onsemi
Manufacturer no.:
     NXH35C120L2C2ESG
EAN/GTIN:
     n/a
Search terms:
Brake rectifiers
IGBT modules
Transistor
Transistors
The ON Semiconductor transfer molded power module with low thermal resistance substrate containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.Low thermal resistance 6mm clearance distance between pin to heatsink Solderable pins Thermistor Pb free Halogen free or BFR free RoHS compliant
More information:
Maximum Continuous Collector Current:
35 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20.0V
Number of Transistors:
6
Configuration:
3 Phase
Package Type:
DIP26
Mounting Type:
Through Hole
Channel Type:
N
Other search terms: brake rectifiers, 2025680, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH35C120L2C2ESG
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