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onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole / 2025682


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Product information
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Product Image
Item number:
     2794E-2025682
Manufacturer:
     onsemi
Manufacturer no.:
     NXH35C120L2C2SG
EAN/GTIN:
     n/a
Search terms:
Transistor
Transistors
Maximum Continuous Collector Current = 35 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20.0V
Number of Transistors = 6
Package Type = DIP26
Mounting Type = Through Hole
Channel Type = N
More information:
Maximum Continuous Collector Current:
35 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20.0V
Number of Transistors:
6
Configuration:
3 Phase
Package Type:
DIP26
Mounting Type:
Through Hole
Channel Type:
N
Other search terms: 2025682, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH35C120L2C2SG
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