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| Item number:
2794E-2043946 Manufacturer no.:
STGWA20HP65FB2 EAN/GTIN:
n/a |
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| The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.Maximum junction temperature of 175°C Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive temperature coefficient More information: | | Maximum Continuous Collector Current: | 40 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 147 W | Number of Transistors: | 1 | Package Type: | TO-247 | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single |
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| Other search terms: 2043946, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA20HP65FB2 |
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