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N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB105N60EF-GE3 / 2047205


Quantity:  pieces  
Product information
Product Image
Product Image
Item number:
     2794E-2047205
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB105N60EF-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)
More information:
Channel Type:
N
Maximum Continuous Drain Current:
29 A
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Series:
SiHB105N60EF
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.102 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Number of Elements per Chip:
1
Other search terms: 2047205, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB105N60EFGE3
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from £ 1.515*
  
Price is valid from 15,000 pieces
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