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STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP / 2049872


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Product information
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Item number:
     2794E-2049872
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGF20H65DFB2
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Transistor
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.Maximum junction temperature : TJ = 175 °C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance
More information:
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
45 W
Number of Transistors:
1
Package Type:
TO-220FP
Pin Count:
3
Other search terms: Transistors, fast recovery diode, 2049872, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGF20H65DFB2
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