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| Item number: 2794E-2049959 Manufacturer no.: STN6N60M2 EAN/GTIN: n/a |
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![](/p.gif) | The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 5.5 A | Maximum Drain Source Voltage: | 25 V | Package Type: | SOT-223 | Series: | STN6N60M2 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 1.25 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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![](/p.gif) | Other search terms: 2049959, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STN6N60M2 |
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