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| Item number: 2794E-2066065 Manufacturer no.: STGWA30IH65DF EAN/GTIN: n/a |
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![](/p.gif) | The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.Designed for soft commutation only Maximum junction temperature: TJ = 175 °C VCE(sat) = 1.55 V (typ.) @ IC = 30 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-packaged diode Positive VCE(sat) temperature coefficient More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 60 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 108 W | Number of Transistors: | 1 | Package Type: | TO-247 | Pin Count: | 4 |
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![](/p.gif) | Other search terms: power transistor, 2066065, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA30IH65DF |
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