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STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247 / 2067212


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Product information
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Item number:
     2794E-2067212
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGWA75H65DFB2
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.Maximum junction temperature: TJ = 175 °C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient
More information:
Maximum Continuous Collector Current:
115 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
357 W
Number of Transistors:
1
Package Type:
TO-247
Pin Count:
3
Transistor Configuration:
Single
Other search terms: Transistor, Transistors, power transistor, 2067212, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA75H65DFB2
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