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| Item number: 2794E-2104966 Manufacturer no.: SIHB11N80AE-GE3 EAN/GTIN: n/a |
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| The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with single configuration.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Integrated Zener diode ESD protection More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 8 A | Maximum Drain Source Voltage: | 800 V | Package Type: | D2PAK (TO-263) | Series: | E | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.391 Ω | Maximum Gate Threshold Voltage: | 2 → 4V | Number of Elements per Chip: | 1 |
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