| ![](/p.gif) |
![](/p.gif) |
| Item number: 2794E-2104975 Manufacturer no.: SiHB186N60EF-GE3 EAN/GTIN: n/a |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.4th generation E series technology Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS) More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 8.4 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Series: | EF | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.168 Ω | Maximum Gate Threshold Voltage: | 3 → 5V | Number of Elements per Chip: | 1 |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Other search terms: 2104975, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiHB186N60EFGE3 |
| ![](/p.gif) | ![](/p.gif) |
| |