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N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3 / 2104975


Quantity:  pieces  
Product information
Product Image
Product Image
Item number:
     2794E-2104975
Manufacturer:
     Vishay
Manufacturer no.:
     SiHB186N60EF-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.4th generation E series technology Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS)
More information:
Channel Type:
N
Maximum Continuous Drain Current:
8.4 A
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Series:
EF
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.168 Ω
Maximum Gate Threshold Voltage:
3 → 5V
Number of Elements per Chip:
1
Other search terms: 2104975, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiHB186N60EFGE3
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