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| Item number: 2794E-2104988 Manufacturer no.: SiHG186N60EF-GE3 EAN/GTIN: n/a |
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![](/p.gif) | The Vishay EF Series Power MOSFET With Fast Body Diode has TO-247AC package type.4th generation E series technology Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS) More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 8.4 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-247AC | Series: | EF | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.168 Ω | Maximum Gate Threshold Voltage: | 3 → 5V | Number of Elements per Chip: | 1 |
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![](/p.gif) | Other search terms: 2104988, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiHG186N60EFGE3 |
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