Product range
United Kingdom
English
My Mercateo
Sign in / Register		Basket
 		 
 >  >  >  >  >  > Item

N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK Vishay SIHU2N80AE-GE3 / 2104997


Quantity:  pieces  
Product information
Product Image
Product Image
Item number:
     2794E-2104997
Manufacturer:
     Vishay
Manufacturer no.:
     SIHU2N80AE-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
The Vishay E Series Power MOSFET has IPAK (TO-251) package type.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Integrated Zener diode ESD protection
More information:
Channel Type:
N
Maximum Continuous Drain Current:
2.9 A
Maximum Drain Source Voltage:
800 V
Package Type:
IPAK (TO-251)
Series:
E
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
2.5 Ω
Maximum Gate Threshold Voltage:
2 → 4V
Number of Elements per Chip:
1
Other search terms: 2104997, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHU2N80AEGE3
An overview of the conditions1
Delivery period
Stock level
Price
from £ 0.27*
  
Price is valid from 75,000 pieces
Orders only in multiples of 10 pieces
Select conditions yourself
Share itemAdd item to shopping list
Staggered prices
Order quantity
Net
Gross
Unit
from 10 pieces
£ 0.40*
£ 0.48
per piece
from 50 pieces
£ 0.39*
£ 0.47
per piece
from 100 pieces
£ 0.38*
£ 0.46
per piece
from 200 pieces
£ 0.36*
£ 0.43
per piece
from 250 pieces
£ 0.35*
£ 0.42
per piece
from 500 pieces
£ 0.32*
£ 0.38
per piece
from 75000 pieces
£ 0.27*
£ 0.32
per piece
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.