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| Item number:
2794E-2122106 Manufacturer no.:
STGW100H65FB2-4 EAN/GTIN:
n/a |
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| IGBTThe STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient More information: | | Maximum Continuous Collector Current: | 145 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 441 W | Number of Transistors: | 1 | Package Type: | TO247-4 | Channel Type: | N | Pin Count: | 4 | Transistor Configuration: | Single |
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| Other search terms: power transistor, 2122106, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGW100H65FB24 |
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