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| Item number:
2794E-2133945 Manufacturer no.:
SCTWA90N65G2V-4 EAN/GTIN:
n/a |
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| The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.High speed switching performance Very high operating junction temperature capability Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Source sensing pin for increased efficiency More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 119 A | Maximum Drain Source Voltage: | 650 V | Package Type: | HiP247-4 | Series: | SCTWA90N65G2V-4 | Mounting Type: | Through Hole | Pin Count: | 4 | Maximum Drain Source Resistance: | 0.024 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 | Transistor Material: | SiC |
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| Other search terms: 2133945, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCTWA90N65G2V4 |
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