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| Item number:
2794E-2148953 Manufacturer no.:
AUIRFR540Z EAN/GTIN:
n/a |
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| The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.Advanced Process Technology Ultra Low On-Resistance Automotive Qualified More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 35 A | Maximum Drain Source Voltage: | 100 V | Package Type: | DPAK (TO-252) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0285 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Other search terms: 2148953, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, AUIRFR540Z |
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