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P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ180P03NS3GATMA1 / 2148990


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Product information
Product Image
Product Image
Item number:
     2794E-2148990
Manufacturer:
     Infineon
Manufacturer no.:
     BSZ180P03NS3GATMA1
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
Channel Type = P
Maximum Continuous Drain Current = 39.6 A
Maximum Drain Source Voltage = 30 V
Series = OptiMOS P3
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.018 O
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3.1V
Number of Elements per Chip = 1
More information:
Channel Type:
P
Maximum Continuous Drain Current:
39.6 A
Maximum Drain Source Voltage:
30 V
Package Type:
PQFN 3 x 3
Series:
OptiMOS P3
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.018 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.1V
Number of Elements per Chip:
1
Transistor Material:
Si
Other search terms: 2148990, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSZ180P03NS3GATMA1
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