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N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L09ATMA2 / 2149026


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Product information
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Product Image
Item number:
     2794E-2149026
Manufacturer:
     Infineon
Manufacturer no.:
     IPB80N06S2L09ATMA2
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.The product is Automotive AEC Q101 qualified 100% Avalanche tested It has 175°C operating temperature
More information:
Channel Type:
N
Maximum Continuous Drain Current:
80 A
Maximum Drain Source Voltage:
55 V
Package Type:
D2PAK (TO-263)
Series:
OptiMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0082 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2V
Number of Elements per Chip:
1
Transistor Material:
Si
Other search terms: 2149026, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB80N06S2L09ATMA2
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