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| Item number:
2794E-2149051 Manufacturer no.:
IPD80R3K3P7ATMA1 EAN/GTIN:
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| The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.It comes with Fully optimized portfolio Integrated Zener Diode ESD protection More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 1.9 A | Maximum Drain Source Voltage: | 800 V | Package Type: | TO-252 | Series: | CoolMOS™ P7 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 3.3 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Other search terms: 2149051, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD80R3K3P7ATMA1 |
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