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| Item number:
2794E-2152583 Manufacturer no.:
IRF7311TRPBF EAN/GTIN:
n/a |
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| The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.Generation V technology Ultra low on resistance Surface mount Fully avalanche rated Dual N-channel MOSFET More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 6.6 A | Maximum Drain Source Voltage: | 20 V | Package Type: | SO-8 | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.029 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 0.7V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Other search terms: 2152583, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF7311TRPBF |
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