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| Item number: 2794E-2156648 Manufacturer no.: IKB15N65EH5ATMA1 EAN/GTIN: n/a |
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![](/p.gif) | The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 30 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20 V, ±30 V | Maximum Power Dissipation: | 105 W | Package Type: | PG-TO263-3 | Pin Count: | 3 |
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![](/p.gif) | Other search terms: power transistor, 2156648, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKB15N65EH5ATMA1 |
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