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Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3 / 2156648


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Product information
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Product Image
Item number:
     2794E-2156648
Manufacturer:
     Infineon
Manufacturer no.:
     IKB15N65EH5ATMA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
More information:
Maximum Continuous Collector Current:
30 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20 V, ±30 V
Maximum Power Dissipation:
105 W
Package Type:
PG-TO263-3
Pin Count:
3
Other search terms: power transistor, 2156648, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKB15N65EH5ATMA1
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from £ 1.646*
  
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