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| Item number: 2794E-2156657 Manufacturer no.: IKD15N60RATMA1 EAN/GTIN: n/a |
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| The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference More information: | | Maximum Continuous Collector Current: | 30 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 250 W | Package Type: | PG-TO252-3 | Pin Count: | 3 |
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| Other search terms: 2156657, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKD15N60RATMA1 |
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