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| Item number: 2794E-2156675 Manufacturer no.: IKW75N65EH5XKSA1 EAN/GTIN: n/a |
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| The Infineon insulated-gate bipolar transistor with high speed H5 technology.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference More information: | | Maximum Continuous Collector Current: | 90 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20 V, ±30 V | Maximum Power Dissipation: | 395 W | Package Type: | PG-TO247-3 | Pin Count: | 3 |
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| Other search terms: power transistor, 2156675, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW75N65EH5XKSA1 |
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