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N-Channel MOSFET, 59 A, 55 V, 3-Pin DPAK Infineon IRFR2905ZTRPBF / 2172619


Quantity:  piece  
Product information
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Product Image
Item number:
     2794E-2172619
Manufacturer:
     Infineon
Manufacturer no.:
     IRFR2905ZTRPBF
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead Free
More information:
Channel Type:
N
Maximum Continuous Drain Current:
59 A
Maximum Drain Source Voltage:
55 V
Package Type:
DPAK (TO-252)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
14.5 mO
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 2172619, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRFR2905ZTRPBF
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2000
£ 7.70*
from £ 0.269*
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2794 East Midlands NN17
2000
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from £ 0.35*
£ 0.408*
3 days
798
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£ 2.00*
from £ 0.376*
£ 1.49*
Prices: 2794 East Midlands NN17
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Minimum order quantity: 2000 pieces ( £ 816.00* plus VAT )
Stock level: 2794 East Midlands NN17
Shipping: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
Processing fee:Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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