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| Item number:
2794E-2195995 Manufacturer no.:
IPD95R2K0P7ATMA1 EAN/GTIN:
n/a |
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| The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 4 A | Maximum Drain Source Voltage: | 950 V | Package Type: | TO-252 | Series: | CoolMOS™ P7 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.002 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 |
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| Other search terms: 2195995, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD95R2K0P7ATMA1 |
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