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| Item number:
2794E-2196019 Manufacturer no.:
IPW60R024P7XKSA1 EAN/GTIN:
n/a |
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| The Infineon 600V CoolMOS P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 386 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247 | Series: | CoolMOS™ P7 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.024 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 2 |
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| Other search terms: 2196019, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPW60R024P7XKSA1 |
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