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| Item number:
2794E-2207409 Manufacturer no.:
IPD65R190C7ATMA1 EAN/GTIN:
n/a |
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| The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in super junction technology Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding Cool MOS™ quality More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 49 A | Maximum Drain Source Voltage: | 700 V | Package Type: | TO-252 | Series: | CoolMOS™ C7 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.9 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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| Other search terms: 2207409, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD65R190C7ATMA1 |
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