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| Item number:
2794E-2224637 Manufacturer no.:
IGT60R190D1SATMA1 EAN/GTIN:
n/a |
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| The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Pb-free plating Halogen free mold compound More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 12.5 A | Maximum Drain Source Voltage: | 600 V | Package Type: | HSOF-8 | Series: | CoolGaN | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.19 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1.6V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 2224637, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IGT60R190D1SATMA1 |
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