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| Item number:
2794E-2224651 Manufacturer no.:
IPB60R040C7ATMA1 EAN/GTIN:
n/a |
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| The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg Best in class RDS(on) /package More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 50 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO 263 | Series: | CoolMOS™ | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.04 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Other search terms: 2224651, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB60R040C7ATMA1 |
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