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Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK Infineon IRF3205ZSTRLPBF / 2224734


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Product information
Product Image
Product Image
Item number:
     2794E-2224734
Manufacturer:
     Infineon
Manufacturer no.:
     IRF3205ZSTRLPBF
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power MOSFET
Power transistor
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The ″Field-Effect″ means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Advanced process technology Ultra-low on-resistance Fast switching Lead-Free, RoHS Compliant
More information:
Channel Type:
N
Maximum Continuous Drain Current:
110 A
Maximum Drain Source Voltage:
55 V
Package Type:
D2PAK (TO-263)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0065 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Silicon
Other search terms: MOSFET, MOSFET transistor, SMD transistor, SMD transistors, Transistor, Transistors, field effect transistor, 2224734, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF3205ZSTRLPBF
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Stock level: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
Processing fee:Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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