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Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B / 2224800


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Product information
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Product Image
Item number:
     2794E-2224800
Manufacturer:
     Infineon
Manufacturer no.:
     FP35R12W2T7B11BOMA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The Infineon EasyPIM™ 2B 1200 V, 35 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology.Low VCEsat TRENCHSTOP™ IGBT7 Overload operation up to 175°C 2.5 kV AC 1min insulation Al2O3 substrate with low thermal resistance High power density Compact design PressFIT contact technology
More information:
Maximum Continuous Collector Current:
35 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
20V
Maximum Power Dissipation:
20 mW
Package Type:
AG-EASY2B
Channel Type:
N
Transistor Configuration:
Common Emitter
Other search terms: power transistor, 2224800, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP35R12W2T7B11BOMA1
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