| |
|
| Item number: 2794E-2224835 Manufacturer no.: IDW20G120C5BFKSA1 EAN/GTIN: n/a |
| |
|
| | |
| The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 20 A in a TO-247-3 package presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is combined with a merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance More information: | | Mounting Type: | SMD | Package Type: | TO-247 | Maximum Continuous Forward Current: | 20A | Peak Reverse Repetitive Voltage: | 1200V | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 3 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky |
|
| | |
| | | |
| Other search terms: Schottky diode, Schottky diodes, 2224835, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, Infineon, IDW20G120C5BFKSA1 |
| | |
| |