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N-Channel MOSFET, 56 A, 1200 V, 4-Pin TO-247-4 Infineon IMZ120R030M1HXKSA1 / 2224862


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Product information
Product Image
Product Image
Item number:
     2794E-2224862
Manufacturer:
     Infineon
Manufacturer no.:
     IMZ120R030M1HXKSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
The Infineon CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.Best in class switching and conduction losses Benchmark high threshold voltage, Vth > 4 V 0V turn-off gate voltage for easy and simple gate drive Wide gate-source voltage range Robust and low loss body diode rated for hard commutation
More information:
Channel Type:
N
Maximum Continuous Drain Current:
56 A
Maximum Drain Source Voltage:
1200 V
Package Type:
TO-247-4
Series:
IMZ1
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
30 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Number of Elements per Chip:
1
Transistor Material:
Si
Other search terms: Transistors, power transistor, 2224862, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMZ120R030M1HXKSA1
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2794 East Midlands NN17
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6546 Yorkshire LS12
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Minimum order quantity: 30 pieces ( £ 396.87* plus VAT )
Stock level: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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