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2794E-2224891 Manufacturer no.:
IPB60R090CFD7ATMA1 EAN/GTIN:
n/a |
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| The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and EOSS Best-in-class RDS(on)/package combinations More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 25 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Series: | CoolMOS™ | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 90 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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