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N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK Vishay SIHB5N80AE-GE3 / 2259912


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Product information
Product Image
Product Image
Item number:
     2794E-2259912
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB5N80AE-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Integrated Zener diode ESD protection
More information:
Channel Type:
N
Maximum Continuous Drain Current:
4.4 A
Maximum Drain Source Voltage:
800 V
Package Type:
D2PAK (TO-263)
Series:
E-Series
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
1.3 Ω
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Other search terms: 2259912, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB5N80AEGE3
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