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Infineon IKP39N65ES5XKSA1 Single IGBT, 62 A 650 V, 3-Pin PG-TO220 / 2266105


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Product information
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Product Image
Item number:
     2794E-2266105
Manufacturer:
     Infineon
Manufacturer no.:
     IKP39N65ES5XKSA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.Very low VCEsat of 1.45 V at 25°C 4 times Ic pulse current (100°C Tc) Maximum junction temperature Tvj 175°C
More information:
Maximum Continuous Collector Current:
62 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
30V
Maximum Power Dissipation:
188 W
Number of Transistors:
1
Configuration:
Single
Package Type:
PG-TO220
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Other search terms: power transistor, 2266105, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKP39N65ES5XKSA1
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