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| Item number: 2794E-2266105 Manufacturer no.: IKP39N65ES5XKSA1 EAN/GTIN: n/a |
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![](/p.gif) | The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.Very low VCEsat of 1.45 V at 25°C 4 times Ic pulse current (100°C Tc) Maximum junction temperature Tvj 175°C More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 62 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 30V | Maximum Power Dissipation: | 188 W | Number of Transistors: | 1 | Configuration: | Single | Package Type: | PG-TO220 | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single |
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![](/p.gif) | Other search terms: power transistor, 2266105, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKP39N65ES5XKSA1 |
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