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| Item number: 2794E-2266114 Manufacturer no.: IKW40N65F5FKSA1 EAN/GTIN: n/a |
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![](/p.gif) | The Infineon IKW40N65F5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 74 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 30V | Maximum Power Dissipation: | 255 W | Number of Transistors: | 1 | Configuration: | Single | Package Type: | PG-TO247 | Channel Type: | N | Pin Count: | 3 |
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![](/p.gif) | Other search terms: power transistor, 2266114, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW40N65F5FKSA1 |
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