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| Item number: 2794E-2282841 Manufacturer no.: SIHB120N60E-T1-GE3 EAN/GTIN: n/a |
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| Channel Type = N Maximum Continuous Drain Current = 25 A Maximum Drain Source Voltage = 650 V Series = E Series Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.12 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Number of Elements per Chip = 2 More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 25 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Series: | E Series | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.12 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Other search terms: 2282841, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB120N60ET1GE3 |
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