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Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK Vishay SIHB24N80AE-GE3 / 2282847


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Product information
Product Image
Product Image
Item number:
     2794E-2282847
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB24N80AE-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
Channel Type = N
Maximum Continuous Drain Current = 21 A
Maximum Drain Source Voltage = 800 V
Series = E Series
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 0.184 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Number of Elements per Chip = 2
More information:
Channel Type:
N
Maximum Continuous Drain Current:
21 A
Maximum Drain Source Voltage:
800 V
Package Type:
D2PAK (TO-263)
Series:
E Series
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.184 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
2
Transistor Material:
Si
Other search terms: 2282847, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB24N80AEGE3
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