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| Item number: 2794E-2282853 Manufacturer no.: SiHF080N60E-GE3 EAN/GTIN: n/a |
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| Channel Type = N Maximum Continuous Drain Current = 14 A Maximum Drain Source Voltage = 650 V Series = E Series Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.08 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Number of Elements per Chip = 1 More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 14 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-220 FP | Series: | E Series | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.08 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Other search terms: 2282853, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiHF080N60EGE3 |
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