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Dual N-Channel MOSFET, 126 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR510DP-T1-RE3 / 2282904


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Product information
Product Image
Product Image
Item number:
     2794E-2282904
Manufacturer:
     Vishay
Manufacturer no.:
     SiR510DP-T1-RE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
Channel Type = N
Maximum Continuous Drain Current = 126 A
Maximum Drain Source Voltage = 100 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.0036 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Number of Elements per Chip = 2
More information:
Channel Type:
N
Maximum Continuous Drain Current:
126 A
Maximum Drain Source Voltage:
100 V
Package Type:
PowerPAK SO-8
Series:
TrenchFET
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.0036 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
2
Transistor Material:
Si
Other search terms: 2282904, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiR510DPT1RE3
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